INVESTIGATION OF THE EFFECT OF ETCHING CURRENT ON TEXTURED SILICON SURFACE FOR FORMING POROUS SILICON LAYERS ACTING AS AN ANTI-REFLECTION COATING.

The porous silicon layers (PSLs) acting as an anti-reflection coating (ARC) formed with different surface porosities are prepared on n+ p textured crystalline CZ- by electrochemical etching (ECE) in HF-basedelectrolyte using current densities.The morphological properties of the PSLs investigated scanning electron microscopy (SEM). results show that structure had a smaller pore size range, and optical surfaces studied photoluminescence “PL” reflectivity measurements. band gap energy increases to 1.904 eV. decreases 0.75% wavelength range (350–750) nm. current-voltage (I-V) characteristics Al/ PS/n+ p/Al junction which reveal increment resulting short-circuit density open-circuit voltage up 2.96 mA/cm2 0.385 V, respectively. These improvement fill factor 48.5%. photosensitivity solar cells showed noticeable enhancement quantum efficiency PS increasing porosity.